NTH4L040N65S3F Datasheet - ON Semiconductor

N-Channel Power MOSFET

NTH4L040N65S3F Features

* 700 V @ TJ = 150°C

* Typ. RDS(on) = 32 mW

* Ultra Low Gate Charge (Typ. Qg = 158 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 1366 pF)

* 100% Avalanche Tested

* These Devices are Pb

* Free and are RoHS Compliant Applications

NTH4L040N65S3F General Description

SUPERFET III MOSFET is ON Semiconductor’s brand *new high voltage super *junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provid.

NTH4L040N65S3F Datasheet (967.55 KB)