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NVD5807N Power MOSFET

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Description

NTD5807N, NVD5807N Power MOSFET 40 V, 23 A, Single N *Channel, DPAK/IPAK .

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Features

* Low RDS(on)
* High Current Capability
* Avalanche Energy Specified
* AEC
* Q101 Qualified and PPAP Capable
* NVD5807N
* These Devices are Pb

Applications

* CCFL Backlight
* DC Motor Control
* Class D Amplifier
* Power Supply Secondary Side Synchronous Rectification MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to
* Source Voltage VDSS 40 V Gate
* to

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