NVH4L040N120M3S
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NVH4L040N120SC1 - SiC MOSFET
(ON Semiconductor)
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET – 40 mohm, 1200 V, M1, TO-247-4L
NVH4L040N120SC1
Features
• Typ. RDS(on) = 40 mW • Ultra Low.
NVH4L040N65S3F - N-Channel MOSFET
(ON Semiconductor)
MOSFET – Single N-Channel, SUPERFET) III, FRFET)
650 V, 65 A, 40 mW
NVH4L040N65S3F
Features
• Ultra Low Gate Charge & Low Effective Output Capacitan.
NVH4L045N065SC1 - SiC MOSFET
(ON Semiconductor)
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET – 33 mohm, 650 V, M2, TO-247-4L
NVH4L045N065SC1
Features
• Typ. RDS(on) = 33 mW @ VGS = 18 V.
NVH4L015N065SC1 - SiC MOSFET
(ON Semiconductor)
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, TO-247-4L
NVH4L015N065SC1
Features
• Typ. RDS(on) = 12 mW @ VGS = 18 V
.
NVH4L018N075SC1 - SiC MOSFET
(ON Semiconductor)
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET – 13.5 mohm, 750 V, M2, TO-247-4L
NVH4L018N075SC1
V(BR)DSS 750 V
RDS(ON) MAX 18 mW @ 18 V
D
.
NVH4L020N120SC1 - SiC MOSFET
(ON Semiconductor)
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET – 20 mohm, 1200 V, M1, TO-247-4L
NVH4L020N120SC1
Features
• Typ. RDS(on) = 20 mW • Ultra Low .
NVH4L022N120M3S - SiC MOSFET
(ON Semiconductor)
DATA SHEET .onsemi.
Silicon Carbide (SiC) MOSFET – EliteSiC, 22 mohm, 1200 V, M3S, TO-247-4L
NVH4L022N120M3S
Features
• Typ. RDS(on) = 22 mW @.
NVH4L025N065SC1 - N-Channel MOSFET
(ON Semiconductor)
MOSFET - SiC Power, Single N-Channel, TO247-4L
650 V, 19 mW, 99 A
NVH4L025N065SC1
Features
• Typ. RDS(on) = 19 mW @ VGS = 18 V
Typ. RDS(on) = 25 mW .
NVH4L027N65S3F - N-Channel MOSFET
(ON Semiconductor)
MOSFET – Single N-Channel, SUPERFET) III, FRFET)
650 V, 75 A, 27.4 mW
NVH4L027N65S3F
Features
• Ultra Low Gate Charge & Low Effective Output Capacit.
NVH4L050N65S3F - N-Channel MOSFET
(ON Semiconductor)
MOSFET – Single N-Channel, SUPERFET) III, FRFET)
650 V, 50 mW, 58 A
NVH4L050N65S3F
Features
• Ultra Low Gate Charge & Low Effective Output Capacitan.