NVH4L040N120M3S SiC MOSFET

ON Semiconductor

Description

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET * EliteSiC, 40 mohm, 1200 V, M3S, TO-247-4L NVH4L040N120M3S .

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Datasheet Specifications

Part number: NVH4L040N120M3S
Manufacturer: ON Semiconductor ↗
File Size: 324.76 KB
Datasheet: NVH4L040N120M3S-ONSemiconductor.pdf
Description: SiC MOSFET

Features

* Typ. RDS(on) = 40 mW @ VGS = 18 V
* Ultra Low Gate Charge (QG(tot) = 75 nC)
* High Speed Switching with Low Capacitance (Coss = 80 pF)
* 100% Avalanche Tested
* AEC
* Q101 Qualified and PPAP Capable
* This Device is Halide Free and RoHS Complia

Applications

* Automotive On Board Charger
* Automotive DC
* DC Converter for EV/HEV MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain
* to
* Source Voltage VDSS 1200 V Gate
* to
* Source Voltage VGS
* 10/+22 V Reco

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NVH4L040N120M3S SiC MOSFET ON Semiconductor

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