NXH600B100H4Q2F2PG Si/SiC Hybrid Module

ON Semiconductor

Description

Si/SiC Hybrid Module * EliteSiC, 3 Channel Symmetric Boost 1000 V, 200 A IGBT, 1200 V, 60 A SiC Diode, Q2 Package NXH600B100H4Q2F2PG, NXH600B1.

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Datasheet Specifications

Part number: NXH600B100H4Q2F2PG
Manufacturer: ON Semiconductor ↗
File Size: 1.73 MB
Datasheet: NXH600B100H4Q2F2PG-ONSemiconductor.pdf
Description: Si/SiC Hybrid Module

Features

* Extremely Efficient Trench with Field Stop Technology
* Low Switching Loss Reduces System Power Dissipation
* Module Design Offers High Power Density
* Low Inductive Layout
* Low Package Height
* Pb
* Free, Halogen Free/BFR Free and RoHS Compli

Applications

* Solar Inverters
* Uninterruptable Power Supplies Systems DATA SHEET www. onsemi. com PIM44, 93x47 (PRESS FIT) CASE 180HF PIM44, 93x47 (SOLDER PIN) CASE 180HE MARKING DIAGRAM NXH600B100H4Q2F2xG ATYYWW NXH600B100H4Q2F2xG = Device Code X = P or S G = Pb
* Free Package AT

NXH600B100H4Q2F2PG Distributors

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NXH600B100H4Q2F2PG SiC Hybrid Module ON Semiconductor

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