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NXH600B100H4Q2F2SG

Si/SiC Hybrid Module

NXH600B100H4Q2F2SG Features

* Extremely Efficient Trench with Field Stop Technology

* Low Switching Loss Reduces System Power Dissipation

* Module Design Offers High Power Density

* Low Inductive Layout

* Low Package Height

* Pb

* Free, Halogen Free/BFR Free and RoHS Compli

NXH600B100H4Q2F2SG Datasheet (1.73 MB)

Preview of NXH600B100H4Q2F2SG PDF

Datasheet Details

Part number:

NXH600B100H4Q2F2SG

Manufacturer:

ON Semiconductor ↗

File Size:

1.73 MB

Description:

Si/sic hybrid module.
Si/SiC Hybrid Module

* EliteSiC, 3 Channel Symmetric Boost 1000 V, 200 A IGBT, 1200 V, 60 A SiC Diode, Q2 Package NXH600B100H4Q2F2PG, NXH600B1.

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NXH600B100H4Q2F2SG SiC Hybrid Module ON Semiconductor

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