NXH600B100H4Q2F2S1G Si/SiC Hybrid Module

ON Semiconductor

Description

Si/SiC Hybrid Module * EliteSiC, 3 Channel Flying Capacitor Boost 1000 V, 200 A IGBT, 1200 V, 60 A SiC Diode, Q2 Package NXH600B100H4Q2F2S1G, .

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Datasheet Specifications

Part number: NXH600B100H4Q2F2S1G
Manufacturer: ON Semiconductor ↗
File Size: 1.73 MB
Datasheet: NXH600B100H4Q2F2S1G-ONSemiconductor.pdf
Description: Si/SiC Hybrid Module

Features

* 3
* channel Boost in Q2 Package
* Extremely Efficient Trench with Field Stop Technology
* Low Switching Loss Reduces System Power Dissipation
* Module Design Offers High Power Density

Applications

* Solar Inverters
* Uninterruptible Power Supplies Systems DATA SHEET www. onsemi. com PIM56, 93x47 (SOLDER PIN) CASE 180BK MARKING DIAGRAM NXH600B100H4Q2F2S1G ATYYWW NXH600B100H4Q2F2S1G = Specific Device Code G = Pb
* Free Package AT = Assembly & Test Site Code YYWW = Year and

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NXH600B100H4Q2F2S1G SiC Hybrid Module ON Semiconductor

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