Description
Si/SiC Hybrid Module * EliteSiC, 3 Channel Symmetric Boost 1000 V, 200 A IGBT, 1200 V, 60 A SiC Diode, Q2 Package NXH600B100H4Q2F2PG, NXH600B1.
Features
* Extremely Efficient Trench with Field Stop Technology
* Low Switching Loss Reduces System Power Dissipation
* Module Design Offers High Power Density
* Low Inductive Layout
* Low Package Height
* Pb
* Free, Halogen Free/BFR Free and RoHS Compli
Applications
* Solar Inverters
* Uninterruptable Power Supplies Systems
DATA SHEET www. onsemi. com
PIM44, 93x47 (PRESS FIT) CASE 180HF
PIM44, 93x47 (SOLDER PIN) CASE 180HE
MARKING DIAGRAM
NXH600B100H4Q2F2xG ATYYWW
NXH600B100H4Q2F2xG = Device Code
X
= P or S
G
= Pb
* Free Package
AT