* that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case temperature (TC) of 25°C. Peak repetitive pulsed power limits are determined by using the thermal response data in conjunction with the procedures discussed in AN569, “Tr
NTB85N03T4 Datasheet (80.77 KB)
NTB85N03T4
ON
80.77 KB
Power mosfet.
NTP85N03, NTB85N03 Power MOSFET 85 Amps, 28 Volts
N
*Channel TO
*220 and D2PAK
Designed for low voltage, high speed switching applicati.
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NTB011N15MC - N-Channel MOSFET
(ON Semiconductor)
MOSFET - N-Channel Shielded Gate PowerTrench[
150 V, 10.9 mW, 75.4 A
NTB011N15MC
Features
• Shielded Gate MOSFET Technology • Max RDS(on) = 10.9 mW .
