* nductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operat
NTB90N02T4 Datasheet (75.58 KB)
NTB90N02T4
ON
75.58 KB
Power mosfet.
NTB90N02, NTP90N02 Power MOSFET 90 Amps, 24 Volts
N
*Channel D2PAK and TO
*220
Designed for low voltage, high speed switching applicati.
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NTB011N15MC - N-Channel MOSFET
(ON Semiconductor)
MOSFET - N-Channel Shielded Gate PowerTrench[
150 V, 10.9 mW, 75.4 A
NTB011N15MC
Features
• Shielded Gate MOSFET Technology • Max RDS(on) = 10.9 mW .
