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FDD5353 60V 50A N-Channel MOSFET

FDD5353 Description

MOSFET * N-Channel, POWERTRENCH) 60 V, 50 A, 12.3 mW FDD5353 General .
This N-Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on-state resistance an.

FDD5353 Features

* Max RDS(on) = 12.3 mW at VGS = 10 V, ID = 10.7 A
* Max RDS(on) = 15.4 mW at VGS = 4.5 V, ID = 9.5 A
* 100% UIL Tested

FDD5353 Applications

* Inverter
* Synchronous Rectifier
* Primary Switch MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage 60 V VGS Gate to Source Voltage ±20 V ID Drain Current A
* Continuous TC = 25°C 50

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60V 50A N-Channel MOSFET ON Semiconductor
ON Semiconductor FDD5353-like datasheet