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FQD4N25 N-Channel MOSFET

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Description

FQD4N25 * N-Channel QFET® MOSFET FQD4N25 N-Channel QFET® MOSFET 250 V, 3 A, 1.75 Ω .
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.

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Features

* 3 A, 250 V, RDS(on) = 1.75 Ω (Max. ) @ VGS = 10 V, ID = 1.5 A
* Low Gate Charge (Typ. 4.3 nC)
* Low Crss (Typ. 4.8 pF)
* 100% Avalanche Tested G S D D-PAK D G Absolute Maximum Ratings TC = 25°C unless otherwise noted.  + 7 7 + < 7 < !$ :

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N-Channel MOSFET ON Semiconductor
ON Semiconductor FQD4N25-like datasheet