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NVBG020N120SC1 - SiC MOSFET

ON Semiconductor

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Datasheet Details

Part number	NVBG020N120SC1
Manufacturer	ON Semiconductor ↗
File Size	343.38 KB
Description	SiC MOSFET
Datasheet	NVBG020N120SC1-ONSemiconductor.pdf

NVBG020N120SC1 Product details

Features

Typ. RDS(on) = 20 mW.
Ultra Low Gate Charge (typ. QG(tot) = 220 nC).
Low Effective Output Capacitance (typ. Coss = 258 pF).
100% Avalanche Tested.
AEC.
Q101 Qualified and PPAP Capable.
This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
Free 2LI (on second level interconnection) Typical.

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Published: Apr 15, 2020 |