OSG60R050HT3ZF Datasheet - Oriental Semiconductor

OSG60R050HT3ZF N-Channel Power MOSFET

The GreenMOS® high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS® Z series is integrated with fast re.

OSG60R050HT3ZF Features

* Low RDS(ON) & FOM

* Extremely low switching loss

* Excellent stability and uniformity Applications

* LED lighting

* Telecom

* Adapter

* Sever

* Solar/UPS Key Performance Parameters Parameter VDS ID, pulse RDS(ON), max @ VGS=10V Qg PD Value 600 156 50 92 320 Unit

OSG60R050HT3ZF Datasheet (0.98 MB)

OSG60R050HT3ZF Datasheet Preview — Preview of OSG60R050HT3ZF PDF

Datasheet Details

Part number:

OSG60R050HT3ZF

Manufacturer:

Oriental Semiconductor

File Size:

0.98 MB

Description:

N-channel power mosfet.

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OSG60R050HT3ZF N-Channel Power MOSFET Oriental Semiconductor

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