2SC3195 Datasheet - PACO

2SC3195 NPN Silicon Epitaxial Planar Transistor

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. Figure 1. Top View S 1 8 D S 2 7 D S 3 D 6 D G 4 5 D P0093-01 (1) Typical RθJA = 40°C/W on a 1-inch2, 2-oz. Cu pad on a 0.06inch thick FR4 PCB. (2) Pulse duration ≤300μs, duty cycle ≤2% GATE .

2SC3195 Features

* Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package PRODUCT SUMMARY Typical Values at 25°C unless otherwise stated VDS Qg Qgd RDS(on) VGS(th) Drain to Source Voltage Gate Charge Total (10V) Gate

2SC3195 Datasheet (100.51 KB)

2SC3195 Datasheet Preview — Preview of 2SC3195 PDF

Datasheet Details

Part number:

2SC3195

Manufacturer:

PACO

File Size:

100.51 KB

Description:

Npn silicon epitaxial planar transistor.

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2SC3195 NPN Silicon Epitaxial Planar Transistor PACO

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