* Low Forward Voltage Drop Reliable High Temperature Operation Softest, fast switching capability 175oC Operating Junction Temperature Lead Free Finish, RoHS Compliant Typical Applications Device optimized for low forward voltage drop to maximize efficiency in Power Supply applications P10200E 2 3 1
P10200D
PFC Device Corporation
418.59 KB
Mos schottky rectifier.
PFC Device Corporation
P10200E P10200D
10A 200V MOS Schottky Rectifier
Major ratings and characteristics
Characteristics IF(AV) Rectangular
Wavefo.
📁 Related Datasheet
P10200E - MOS Schottky Rectifier
(PFC Device Corporation)
PFC Device Corporation
P10200E P10200D
10A 200V MOS Schottky Rectifier
Major ratings and characteristics
Characteristics IF(AV) Rectangular
Wavefo.
P1020HDB - N-Channel Enhancement Mode Field Effect Transistor
(NIKO-SEM)
NIKO-SEM
N-Channel Enhancement Mode
P1020HDB
Field Effect Transistor
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
200V
3.
P102 - PASSIVATED ASSEMBLED CIRCUIT ELEMENTS
(International Rectifier)
Bulletin I27125
rev. A 04/99
P100 SERIES
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS
Features
Glass passivated junctions for greater reliability Electric.
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Document Number: P1024RDB-PA Agile # UMS-26815 2.0, 07/2011
P1024RDB-PA Specification
QorIQ Integrat.
P100 - PASSIVATED ASSEMBLED CIRCUIT ELEMENTS
(International Rectifier)
Bulletin I27125
rev. A 04/99
P100 SERIES
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS
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Glass passivated junctions for greater reliability Electric.
P1000A - Silicon Rectifiers
(Diotec Semiconductor)
P 1000 A P 1000 M Silicon Rectifiers Silizium Gleichrichter
Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrs.
P1000A - Standard silicon rectifier diode
(Semikron International)
P 1000 A P 1000 S
.. 0,
:
;
4
;
;
.
+.
4
;
;
.
;
;
,
26 7 $ 8 2: 7 $ 8 .
P1000B - Silicon Rectifiers
(Diotec Semiconductor)
P 1000 A P 1000 M Silicon Rectifiers Silizium Gleichrichter
Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrs.
