PJX8839 Datasheet, Mosfet, Pan Jit International

PJX8839 Features

• Mosfet
• RDS(ON) , VGS@-10V, ID@-500mA<4Ω
• RDS(ON) , VGS@-4.5V, ID@-200mA<6Ω
• RDS(ON) , VGS@-2.5V, ID@-50mA<13Ω
• Advanced Trench Process Technology

PDF File Details

Part number:

PJX8839

Manufacturer:

Pan Jit International

File Size:

265.86kb

Download:

📄 Datasheet

Description:

P-channel enhancement mode mosfet.

PJX8839 Application

• Applications shown on the herein document are examples of standard use and operation. Customers are responsible in comprehending the suitable use in

TAGS

PJX8839

Pan Jit International

📁 Related Datasheet

PJX8838 - N-Channel Enhancement Mode MOSFET (Pan Jit International)
PPJX8838 50V N-Channel Enhancement Mode MOSFET– ESD Protected Voltage 50 V Current 360mA SOT-563 Features  RDS(ON) , VGS@10V, ID@500mA<1.45Ω  .

PJX8802 - 20V N-CHANNEL MOSFET (Pan Jit International)
PPJX8802 20V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 20 V Current 0.7A SOT-563 Features  RDS(ON) , VGS@4,5V, ID@0.7A<150mΩ .

PJX8803 - P-Channel Enhancement Mode MOSFET (Pan Jit International)
PPJX8803 20V P-Channel Enhancement Mode MOSFET – ESD Protected Voltage -20 V Current -0.6A SOT-563 Features  RDS(ON) , VGS@-4.5V, ID@-0.6A<340.

PJX8804 - N-Channel Enhancement Mode MOSFET (Pan Jit International)
PPJX8804 30V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage 30 V Current 0.6A SOT-563 Features  RDS(ON) , VGS@4,5V, ID@0.6A<220mΩ .

PJX8805 - P-Channel Enhancement Mode MOSFET (Pan Jit International)
PPJX8805 30V P-Channel Enhancement Mode MOSFET – ESD Protected Voltage -30 V Current -0.5A SOT-563 Features  RDS(ON) , VGS@-4.5V, ID@-0.5A<390.

PJX8806 - 20V N-Channel MOSFET (PanJit International)
PPJX8806 20V N-Channel Enhancement Mode MOSFET – ESD Protected Voltage Features         20 V Current 800mA SOT-563 Unit : inch(mm) RDS(O.

PJX8807 - P-Channel Enhancement Mode MOSFET (Pan Jit International)
PPJX8807 20V P-Channel Enhancement Mode MOSFET Voltage -20 V Current -500mA Features  Low Voltage Drive (1.2V).  Advanced Trench Process Techno.

PJX8812 - 30V N-Channel MOSFET (Pan Jit International)
PPJX8812 30V N-Channel Enhancement Mode MOSFET– ESD Protected Voltage 30 V Current 350mA SOT-563 Features  RDS(ON) , VGS@4.5V, ID@350mA<1.2Ω  R.

PJX8872B - N-Channel Enhancement Mode MOSFET (Pan Jit International)
PPJX8872B 60V N-Channel Enhancement Mode MOSFET Voltage 60 V Current 200mA Features  RDS(ON) , VGS@10V, ID@600mA<3Ω  RDS(ON) , VGS@4.5V, ID@20.

PJX8603 - Complementary Enhancement Mode MOSFET (Pan Jit International)
PPJX8603 Complementary Enhancement Mode MOSFET – ESD Protected Voltage 50 / -60V Current SOT-563 0.36A / -0.2A Features  Advanced Trench Process.