Datasheet4U Logo Datasheet4U.com

2SB1398

Silicon PNP epitaxial planer type Transistor

2SB1398 Features

* Unit nA nA V V V MHz pF Pulse measurement

* 1h FE Rank classification P 90 ~ 135 Q 120 ~ 205 Rank hFE 1 Transistor PC

* Ta 1.6

* 6 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25˚C

* 5 IB=

2SB1398 Datasheet (38.39 KB)

Preview of 2SB1398 PDF

Datasheet Details

Part number:

2SB1398

Manufacturer:

Panasonic Semiconductor

File Size:

38.39 KB

Description:

Silicon pnp epitaxial planer type transistor.
Transistor 2SB1398 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm 6.9±0.1 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.15 0.7.

📁 Related Datasheet

2SB1390 - Silicon PNP Transistor (Hitachi Semiconductor)
2SB1390 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter ID 4 kΩ (Typ) 2.

2SB1390 - PNP Transistor (INCHANGE)
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) ·High DC Current Gain- : hFE= 1.

2SB1390 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor .. Product Specification Silicon PNP Power Transistors 2SB1390 DESCRIPTION ·With TO-220Fa package ·High DC.

2SB139040ML - SCHOTTKY BARRIER DIODE (Silan Microelectronics)
2SB139040ML 2SB139040ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø Ø Ø Ø Ø Ø 2SB139040ML is a schottky barrier diode chips Lb Low power losses, high .

2SB139060ML - SCHOTTKY BARRIER DIODE (Silan Microelectronics)
2SB139060ML 2SB139060ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø Ø Ø Ø Ø Ø 2SB139060ML is a schottky barrier diode chips Lb Low power losses, high .

2SB1391 - Silicon PNP Transistor (Hitachi Semiconductor)
2SB1391 Silicon PNP Triple Diffused Application Power switching Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 12 3 2 kΩ (Typ) 200 Ω (Typ.

2SB1391 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor .. Product Specification Silicon PNP Power Transistors 2SB1391 DESCRIPTION ·With TO-220Fa package ·High DC.

2SB1391 - PNP Transistor (INCHANGE)
isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -120V(Min) ·High DC Current Gain- : hFE= .

TAGS

2SB1398 Silicon PNP epitaxial planer type Transistor Panasonic Semiconductor

Image Gallery

2SB1398 Datasheet Preview Page 2

2SB1398 Distributor