2SB1398 Datasheet (Panasonic Semiconductor) - Silicon PNP epitaxial planer type Transistor

2SB1398, Silicon PNP epitaxial planer type Transistor

Transistor 2SB1398 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm 6.9±0.1 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.15 0.7 4.0 q q q Low collector to emitter saturation voltage VCE(sat).

Large collector current IC.

Allowing supply with the radial taping.

0.65 max.

1.0 1.0 0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Jun

2SB1398 Features

* Unit nA nA V V V MHz pF Pulse measurement

* 1h FE Rank classification P 90 ~ 135 Q 120 ~ 205 Rank hFE 1 Transistor PC

* Ta 1.6

* 6 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25˚C

* 5 IB=