2SB324
Panasonic Semiconductor
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Pnp transistor.
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2SB337 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistors
2SB337
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= -0.29V(Typ.) @IC= -4A ·High Power Dissipation ·M.
2SB337 - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
2SB337
DESCRIPTION ·With TO-3 package ·Low collecto.
2SB367 - Transistor
(Hitachi)
.
2SB368 - Transistor
(Hitachi)
.
2SB370 - TRANSISTORS FOR AUDIO FREQUENCY OUTPUT AMPLIFIER USE
(Hitachi)
.
2SB030070MLJY - 2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS
(Silan Microelectronics)
2SB030070MLJY
2SB030070MLJY SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB030070MLJY is a schottky barrier diode chips fabricated in silicon epitaxial.
2SB035030MLJY - 2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS
(Silan Microelectronics)
2SB035030MLJY
2SB035030MLJY SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB035030MLJY is a schottky barrier diode chips
Lb La
fabricated in silicon ep.
2SB035100ML - 2SB035100ML SCHOTTKY BARRIER DIODE CHIPS
(Silan Microelectronics)
2SB035100ML
2SB035100ML SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB035100ML is a schottky barrier diode chips
Lb La
fabricated in silicon epitaxia.
2SB0709A - Silicon PNP epitaxial planar type Transistor
(Panasonic Semiconductor)
Transistors
2SB0709A (2SB709A)
Silicon PNP epitaxial planar type
For general amplification Complementary to 2SD0601A (2SD601A) ■ Features
• High forw.
2SB0710 - Silicon PNP epitaxial planer type Transistor
(Panasonic Semiconductor)
Transistors
2SB0710, 2SB0710A
Silicon PNP epitaxial planer type
Unit: mm
For general amplification Complementary to 2SD0602 and 2SD0602A I Features
.