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2SB337 - PNP Transistor

2SB337 Description

isc Silicon PNP Power Transistors 2SB337 .
Low Collector Saturation Voltage- : VCE(sat)= -0. High Power Dissipation. Minimum Lot-to-Lot variations for robust dev.

2SB337 Applications

* Designed for audio frequency power output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCER Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -10 V IC Collector Current-Continuous -7 A IE Emitter Curr

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Datasheet Details

Part number
2SB337
Manufacturer
INCHANGE
File Size
206.60 KB
Datasheet
2SB337-INCHANGE.pdf
Description
PNP Transistor

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INCHANGE 2SB337-like datasheet