2SD2413 Datasheet, Transistor, Panasonic Semiconductor

✔ 2SD2413 Features

q q q q q 4.5±0.1 1.6±0.2 1.5±0.1 High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to e

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2SD2413

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Panasonic Semiconductor

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📄 Datasheet

Description:

Silicon npn transistor.

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📁 Related Datasheet

2SD2413 - GENERAL PURPOSE TRANSISTOR (HOTTECH)
REPLACEMENT TYPE :2SD2413 FEATURES  High Collector to Base Voltage VCBO  High Collector to Emitter Voltage VCEO  Large Collector Power Dissipation.

2SD2413 - Silicon NPN triple diffusion planer type Transistor (GME)
Silicon NPN triple diffusion planer type FEATURES  High collector to base voltage VCBO.  High collector to emitter voltage VCEO.  Large collector.

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2414(SM) 2SD2414(SM) High Current Switching Applications Power Amplifier Applications Unit: .

2SD2416 - Silicon NPN Transistor (Panasonic Semiconductor)
Transistor 2SD2416 Silicon NPN epitaxial planer type darlington For low-frequency amplification Unit: mm s Features q q q q 4.5±0.1 1.6±0.2 1.5±0..

2SD2400 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2400 .. DESCRIPTION ·With TO-220F package ·Complem.

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·Wide Area of Safe Operation ·Complement to.

2SD2400A - Power Transistor (Rohm)
Transistors 2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A (96-612-A58) (96-744-C58) 277 .

2SD2401 - Silicon NPN Transistor (Sanken electric)
2SD2401 Darlington Equivalent circuit C B (70Ω) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1570) Application : Audio, S.

2SD2401 - SILICON POWER TRANSISTOR (SavantIC)
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2401 .. DESCRIPTION ·With MT-200 package ·Compleme.

2SD2401 - NPN Transistor (INCHANGE)
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High DC Current Gain- : hFE= 5000.

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2SD2413 Silicon NPN Transistor Panasonic Semiconductor