2SK1860 Silicon N-Channel MOSFET

Panasonic Semiconductor

Description

Silicon Junction FETs (Small Signal) 2SK1860 Silicon N-Channel Junction FET Unit: mm For impedance conversion in low frequency For electret capacito.

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Datasheet Specifications

Part number: 2SK1860
Manufacturer: Panasonic Semiconductor
File Size: 77.30 KB
Datasheet: 2SK1860_PanasonicSemiconductor.pdf
Description: Silicon N-Channel MOSFET

Features

* High mutual conductance gm
* Low noise voltage of NV 1 +0.10 0.40
* 0.05 0.12
* 0.01 +0.02 3 1.5±0.2 2.1±0.1 5.8±0.2 2
* Absolute Maximum Ratings Ta = 25°C Parameter Drain-source voltage (Gate open) Drain-gate voltage (Souse open) Drain-source current (Gat

Applications

* or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications:
* Special applications (such as for airplanes, aerospace, automobiles, traff

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2SK1860 Silicon N-Channel MOSFET Panasonic Semiconductor

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