Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter
Outline
LDPAK 4 4
1 2 1 D
2SK1860, Panasonic Semiconductor
Silicon Junction FETs (Small Signal)
2SK1860
Silicon N-Channel Junction FET
Unit: mm
For impedance conversion in low frequency For electret capacito.
2SK1862, Hitachi Semiconductor
2SK1862, 2SK1863
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low driv.
2SK1863, Hitachi Semiconductor
2SK1862, 2SK1863
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low driv.
2SK1869L, Hitachi Semiconductor
2SK1869(L), 2SK1869(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Lo.
2SK1869S, Hitachi Semiconductor
2SK1869(L), 2SK1869(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Lo.
