LN162S - GaAs Infrared Light Emitting Diode

Name: LN162S
SKU: LN162S-59816

Panasonic Semiconductor

The LN162S by Panasonic Semiconductor is a GaAs Infrared Light Emitting Diode. Below is the official datasheet preview.

Datasheet Details

Part number	LN162S
Manufacturer	Panasonic Semiconductor
File Size	39.03 KB
Description	GaAs Infrared Light Emitting Diode
Datasheet	LN162S_PanasonicSemiconductor.pdf
Additional preview pages of the LN162S datasheet.

High-power output, high-efficiency : PO = 3.5 mW (typ. ) Infrared light emission close to monochromatic light : λP = 950 nm (typ. ) Small ceramic package 3.75±0.3 2.0±0.2 12.5 min. ø3.0±0.15 ø0.3±0.05 ø0.45±0.05 0.9±0.15 Absolute Maximum Ratings (Ta = 25˚C) 2 1 1: Anode 2: Cathode Parameter Power dissipation Forward current (DC) Pulse forward Current Reverse voltage (DC) Operating ambient temperature Storage temperature.
Symbol PD IF IFP.
VR Topr Tstg Ratings 75 50 1 3.
25.

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Published: Mar 22, 2005 |