LN162S - GaAs Infrared Light Emitting Diode

Panasonic Semiconductor

Datasheet Details

Part number	LN162S
Manufacturer	Panasonic Semiconductor
File Size	39.03 KB
Description	GaAs Infrared Light Emitting Diode
Datasheet	LN162S_PanasonicSemiconductor.pdf

High-power output, high-efficiency : PO = 3.5 mW (typ. ) Infrared light emission close to monochromatic light : λP = 950 nm (typ. ) Small ceramic package 3.75±0.3 2.0±0.2 12.5 min. ø3.0±0.15 ø0.3±0.05 ø0.45±0.05 0.9±0.15 Absolute Maximum Ratings (Ta = 25˚C) 2 1 1: Anode 2: Cathode Parameter Power dissipation Forward current (DC) Pulse forward Current Reverse voltage (DC) Operating ambient temperature Storage temperature.
Symbol PD IF IFP.
VR Topr Tstg Ratings 75 50 1 3.
25.

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Published: Mar 22, 2005 |