Datasheet Specifications
- Part number
- LN162S
- Manufacturer
- Panasonic Semiconductor
- File Size
- 39.03 KB
- Datasheet
- LN162S_PanasonicSemiconductor.pdf
- Description
- GaAs Infrared Light Emitting Diode
Description
Infrared Light Emitting Diodes LN162S GaAs Infrared Light Emitting Diode Unit : mm For optical control systems .
Features
* High-power output, high-efficiency : PO = 3.5 mW (typ. ) Infrared light emission close to monochromatic light : λP = 950 nm (typ. ) Small ceramic package 3.75±0.3 2.0±0.2 12.5 min. ø3.0±0.15 ø0.3±0.05 ø0.45±0.05 0.9±0.15 Absolute Maximum Ratings (Ta = 25˚C) 2 1 1: Anode 2: Cathode Parameter PoweLN162S Distributors
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