LN66L Datasheet, Emitting Diode, Panasonic Semiconductor

Gaas infrared light emitting diode

LN66L

Panasonic Semiconductor

42.27 KB

Gaas infrared light emitting diode.
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High-power output, high-efficiency :PO = 8 mW (typ.) Emitted light spectrum suited for silicon photodetectors Wide directivity : θ = 25 deg. (typ.) Transparent epoxy resi

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