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LN66L - GaAs Infrared Light Emitting Diode

Features

  • High-power output, high-efficiency :PO = 8 mW (typ. ) Emitted light spectrum suited for silicon photodetectors Wide directivity : θ = 25 deg. (typ. ) Transparent epoxy resin package Long lead-wire type 26.3±1.0 24.3±1.0 5.25±0.3 1.5 1.0 7.65±0.2 ø5.0±0.2 Good radiant power output linearity with respect to input current Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature.
  • Symbol PD IF IFP.
  • VR Topr.

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Datasheet Details

Part number LN66L
Manufacturer Panasonic Semiconductor
File Size 42.27 KB
Description GaAs Infrared Light Emitting Diode
Datasheet download datasheet LN66L Datasheet
Additional preview pages of the LN66L datasheet.

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Full PDF Text Transcription

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Infrared Light Emitting Diodes LN66L GaAs Infrared Light Emitting Diode Unit : mm Not soldered 2.25 2-0.8 max. 2-0.6±0.15 2.54 For optical control systems Features High-power output, high-efficiency :PO = 8 mW (typ.) Emitted light spectrum suited for silicon photodetectors Wide directivity : θ = 25 deg. (typ.) Transparent epoxy resin package Long lead-wire type 26.3±1.0 24.3±1.0 5.25±0.3 1.5 1.0 7.65±0.2 ø5.0±0.2 Good radiant power output linearity with respect to input current Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP* VR Topr Tstg Ratings 160 100 1.5 3 –25 to +85 – 40 to +100 Unit mW mA A V ˚C ˚C ø6.0±0.
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