LN66L - GaAs Infrared Light Emitting Diode

Panasonic Semiconductor

Datasheet Details

Part number	LN66L
Manufacturer	Panasonic ↗ Semiconductor
File Size	42.27 KB
Description	GaAs Infrared Light Emitting Diode
Datasheet	LN66L_PanasonicSemiconductor.pdf

High-power output, high-efficiency :PO = 8 mW (typ. ) Emitted light spectrum suited for silicon photodetectors Wide directivity : θ = 25 deg. (typ. ) Transparent epoxy resin package Long lead-wire type 26.3±1.0 24.3±1.0 5.25±0.3 1.5 1.0 7.65±0.2 ø5.0±0.2 Good radiant power output linearity with respect to input current Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature.
Symbol PD IF IFP.
VR Topr.

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Published: Mar 22, 2005 |