Datasheet Specifications
- Part number
- LN66L
- Manufacturer
- Panasonic Semiconductor
- File Size
- 42.27 KB
- Datasheet
- LN66L_PanasonicSemiconductor.pdf
- Description
- GaAs Infrared Light Emitting Diode
Description
Infrared Light Emitting Diodes LN66L GaAs Infrared Light Emitting Diode Unit : mm Not soldered 2.25 2-0.8 max.2-0.6±0.15 2.54 For optical control s.
Features
* High-power output, high-efficiency :PO = 8 mW (typ. ) Emitted light spectrum suited for silicon photodetectors Wide directivity : θ = 25 deg. (typ. ) Transparent epoxy resin package Long lead-wire type 26.3±1.0 24.3±1.0 5.25±0.3 1.5 1.0 7.65±0.2 ø5.0±0.2 Good radiant power output linearity with respLN66L Distributors
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