Part number:
LN66L
Manufacturer:
Panasonic Semiconductor
File Size:
42.27 KB
Description:
Gaas infrared light emitting diode.
Datasheet Details
LN66L Features
* High-power output, high-efficiency :PO = 8 mW (typ.) Emitted light spectrum suited for silicon photodetectors Wide directivity : θ = 25 deg. (typ.) Transparent epoxy resin package Long lead-wire type 26.3±1.0 24.3±1.0 5.25±0.3 1.5 1.0 7.65±0.2 ø5.0±0.2 Good radiant power output linearity with resp
Datasheet Details
LN66L
Panasonic Semiconductor
42.27 KB
Gaas infrared light emitting diode.
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LN66L Distributor