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LN69 GaAs Infrared Light Emitting Diode

LN69 Description

Infrared Light Emitting Diodes LN69 GaAs Infrared Light Emitting Diode Unit : mm Not soldered 2.0 max.2-0.8 max.2-0.5±0.1 0.5±0.1 2 (1.5) 1 2.54 1..

LN69 Features

* High-power output, high-efficiency : Ie = 3.5 mW/sr (min. ) Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ. ) Good radiant power output linearity with respect to input current Long lifetime, high reliability ø3 plastic package Absolute Maximum Ratings (Ta = 25˚C) Paramete

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Datasheet Details

Part number
LN69
Manufacturer
Panasonic Semiconductor
File Size
40.40 KB
Datasheet
LN69_PanasonicSemiconductor.pdf
Description
GaAs Infrared Light Emitting Diode

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GaAs Infrared Light Emitting Diode Panasonic Semiconductor
Panasonic Semiconductor LN69-like datasheet