LN69 - GaAs Infrared Light Emitting Diode

Panasonic Semiconductor

Datasheet Details

Part number	LN69
Manufacturer	Panasonic Semiconductor
File Size	40.40 KB
Description	GaAs Infrared Light Emitting Diode
Datasheet	LN69_PanasonicSemiconductor.pdf

High-power output, high-efficiency : Ie = 3.5 mW/sr (min. ) Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ. ) Good radiant power output linearity with respect to input current Long lifetime, high reliability ø3 plastic package Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature.
Symbol PD IF IFP.
VR Topr Tstg ratings 75 50 1 3.

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Published: Mar 22, 2005 |