Part number:
LN69
Manufacturer:
Panasonic Semiconductor
File Size:
40.40 KB
Description:
Gaas infrared light emitting diode.
Datasheet Details
LN69 Features
* High-power output, high-efficiency : Ie = 3.5 mW/sr (min.) Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.) Good radiant power output linearity with respect to input current Long lifetime, high reliability ø3 plastic package Absolute Maximum Ratings (Ta = 25˚C) Paramete
Datasheet Details
LN69
Panasonic Semiconductor
40.40 KB
Gaas infrared light emitting diode.
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