Datasheet Specifications
- Part number
- LNA2W01L
- Manufacturer
- Panasonic Semiconductor
- File Size
- 44.34 KB
- Datasheet
- LNA2W01L_PanasonicSemiconductor.pdf
- Description
- GaAs Infrared Light Emitting Diode
Description
Infrared Light Emitting Diodes LNA2W01L GaAs Infrared Light Emitting Diode Unit : mm For optical control systems .
Features
* High-power output, high-efficiency : PO = 4.5 mW (typ. ) Emitted light spectrum suited for silicon photodetectors Infrared light emission close to monochromatic light : λP = 950 nm (typ. ) 1.05±0.1 1 0.5±0.1 Type number : Cathode mark (Red) 10.0 min. 10.0 min. 3.2±0.3 3.2±0.3 ø1.8 2 45 ˚ 2.2±0.15LNA2W01L Distributors
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