OH10003 - GaAs Hall Device
OH10003 Features
* Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T)
* Input resistance: typ. 0.85 kΩ
* Satisfactory linearity of GaAs hall voltage with respect to the magnetic field
* Small temperature coefficient of the hall voltage: β ≤
* 0.06%/°C
* Sealed in the Mini
