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OH10003 Datasheet - Panasonic Semiconductor

OH10003 - GaAs Hall Device

OH10003 Features

* Hall voltage: typ. 150 mV (VC = 6 V, B = 0.1 T)

* Input resistance: typ. 0.85 kΩ

* Satisfactory linearity of GaAs hall voltage with respect to the magnetic field

* Small temperature coefficient of the hall voltage: β ≤

* 0.06%/°C

* Sealed in the Mini

OH10003_PanasonicSemiconductor.pdf

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Datasheet Details

Part number:

OH10003

Manufacturer:

Panasonic Semiconductor

File Size:

48.74 KB

Description:

Gaas hall device.

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