* Gate-source surrender voltage VGSS : ± 30 guaranteed
* Avalanche energy capacity guaranteed: EAS > 986 mJ
* High-speed switching: tf = 39 ns
* Package
* Code TO-220D-A1
* Pin Name 1: Gate 2: Drain 3: Source Parameter Symbol VDSS VGSS ID IDP Drain-s
2SK3892
Panasonic
297.67 KB
Silicon n-channel power mosfet.
This product complies with the RoHS Directive (EU 2002/95/EC).
Power MOSFETs
2SK3892
Silicon N-channel power MOSFET
For contactless relay, diving ci.
📁 Related Datasheet
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Outline Drawings (mm)
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DATA SHEET
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SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3899 is N-channel MOS Field Effect Transistor .
2SK3899 - MOS Field Effect Transistor
(Guangdong Kexin)
..
SMD Type
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TO-263
+0.1 1.27-0.1
Unit: mm
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2SK3800 - MOSFET
(Sanken)
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Absolute Maximum Ratings (Ta=25ºC)
Symbol
Ratings
Unit
VDSS
40
V
VGSS
±20
V
ID
±70
A
ID (pulse)*1
±140
A
PD EAS*2
80.
