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2SK662 - N-Channel MOSFET

2SK662 Description

Silicon Junction FETs (Small Signal) 2SK662 Silicon N-Channel Junction FET For low-frequency amplification unit: mm 2.1±0.1 s .

2SK662 Features

* q High mutual conductance gm q Low noise type q S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 0.65 0.425 1.25±0.1 0.425 1 2.0±0.2 1.3±0.1 0.65 3 2 s Absolute Maximum Ratings (Ta = 25°C) 0.2 Parameter Drain to Source voltage

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N-Channel MOSFET Panasonic Semiconductor
Panasonic Semiconductor 2SK662-like datasheet