Datasheet4U Logo Datasheet4U.com

PN163NC Silicon NPN Phototransistor

PN163NC Description

Phototransistors PN163NC Silicon NPN Phototransistor 3.5±0.3 Gate the rest 2.4 1.1 0.8 max.1.1 0.8 Unit : mm 3.0±0.3 1.95±0.25 1.4±0.2 0.9 0.5 For.

PN163NC Features

* High sensitivity Fast response : tr = 4 µs (typ. ) Adoption of visible light cutoff resin Ultraminiature, thin side-view type package ø1.1 R0.5 12 min. Not soldered 2.15 max. 2-0.5±0.15 0.3±0.15 2 2.54 1 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Collector cur

📥 Download Datasheet

Preview of PN163NC PDF
datasheet Preview Page 2

Datasheet Details

Part number
PN163NC
Manufacturer
Panasonic Semiconductor
File Size
45.93 KB
Datasheet
PN163NC_PanasonicSemiconductor.pdf
Description
Silicon NPN Phototransistor

📁 Related Datasheet

  • PN1608 - SMD Power Inductors Unshielded (Premo)
  • PN166 - Silicon PNP Phototransistor (Panasonic)
  • PN100 - Small Signal General Purpose Transistors (TAITRON)
  • PN100A - NPN Amplifier (Fairchild Semiconductor)
  • PN1011 - (PN1xx) SMD Power Inductors Unshielded (Premo)
  • PN105 - (PN1xx) SMD Power Inductors Unshielded (Premo)
  • PN10HN60 - N-Channel Superjunction MOSFET (Chipown)
  • PN10HN60-CAI-T1 - N-Channel Superjunction MOSFET (Chipown)

📌 All Tags

Panasonic Semiconductor PN163NC-like datasheet