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XP1D873 - Silicon N-channel junction FET

XP1D873 Description

Composite Transistors XP1D873 Silicon N-channel junction FET Unit: mm 2.1±0.1 0.425 1.25±0.1 0.425 0.2±0.05 0.12 * 0.02 +0.05 For analog swi.

XP1D873 Features

* q q q 0.9± 0.1 s Basic Part Number of Element q s Absolute Maximum Ratings Parameter Gate to drain voltage Rating Drain current of element Gate current Total power dissipation Overall Channel temperature Storage temperature Symbol VGDS ID IG PT Tch Tstg (Ta=25˚C) Ratings
* 50 30 10 150 15

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Datasheet Details

Part number
XP1D873
Manufacturer
Panasonic Semiconductor
File Size
29.96 KB
Datasheet
XP1D873_PanasonicSemiconductor.pdf
Description
Silicon N-channel junction FET

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