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F1070 - RF POWER VDMOS TRANSISTOR

F1070 Description

polyfet rf devices General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

F1070 Features

* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1070 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 200 Watts Gemini Package Style AH HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RATIN

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Datasheet Details

Part number
F1070
Manufacturer
Polyfet RF Devices
File Size
38.23 KB
Datasheet
F1070_PolyfetRFDevices.pdf
Description
RF POWER VDMOS TRANSISTOR

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POWER VDMOS TRANSISTOR Polyfet RF Devices
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