F1070 Datasheet - Polyfet RF Devices

F1070, RF POWER VDMOS TRANSISTOR

polyfet rf devices General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

Features

* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1070 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 200 Watts Gemini Package Style AH HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RATIN

F1070_PolyfetRFDevices.pdf