Part number:
F1076
Manufacturer:
Polyfet RF Devices
File Size:
38.75 KB
Description:
Rf power vdmos transistor.
* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1076 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 40 Watts Push - Pull Package Style AQ HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM R
F1076
Polyfet RF Devices
38.75 KB
Rf power vdmos transistor.
📁 Related Datasheet
F1070 - RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
F1072 - RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
F1074 - RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
F1077 - RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
.
F1000LC120 - Extra Fast Recovery Diode
(IXYS)
WESTCODE
An IXYS Company
Date:- 20 Nov, 2003 Data Sheet Issue:- 1
Provisional Data
Extra Fast Recovery Diode Type F1000LC120
Old Type .
F1001 - RF POWER VDMOS TRANSISTOR
(Polyfet RF Devices)
polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military .
F100122 - 9-BIT BUFFER
(National Semiconductor)
.
F100124 - Hex TTL-to-ECL Translator
(National Semiconductor)
..
DataSheet 4 U .
..
DataSheet 4 U .
..
DataSheet 4 U .
..
DataSh.
