F1074 Datasheet - Polyfet RF Devices

F1074, RF POWER VDMOS TRANSISTOR

polyfet rf devices General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

Features

* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance Total Device Dissipation 350 Watts Junction to Case Thermal Resistance 0.5 o C/W Maximum Junction Temperature 200 o C Storage Temperature F1074 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT

F1074_PolyfetRFDevices.pdf