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SM401

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

SM401 Features

* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 135.0 Watts Single Ended Package Style AM HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 2

SM401 Datasheet (37.45 KB)

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Datasheet Details

Part number:

SM401

Manufacturer:

Polyfet RF Devices

File Size:

37.45 KB

Description:

Silicon gate enhancement mode rf power vdmos transistor.

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SM401 SILICON GATE ENHANCEMENT MODE POWER VDMOS TRANSISTOR Polyfet RF Devices

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