F1210 RF POWER VDMOS TRANSISTOR

Polyfet RF Devices

F1210 Description

polyfet rf devices General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

F1210 Features

* gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance TM F1210 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 10 Watts Single Ended Package Style AA HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM

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F1210 Datasheet Preview — Preview of F1210 PDF

Datasheet Details

Part number: F1210
Manufacturer: Polyfet RF Devices
File Size: 37.75 KB
Datasheet: F1210_PolyfetRFDevices.pdf
Description: RF POWER VDMOS TRANSISTOR

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POWER VDMOS TRANSISTOR Polyfet RF Devices

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