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P122 PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

P122 Description

polyfet rf devices P122 General .
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.

P122 Features

* low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 1.0 Watts Single Ended Package Style SOT 223 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSO

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Datasheet Details

Part number
P122
Manufacturer
Polyfet RF Devices
File Size
43.64 KB
Datasheet
P122_PolyfetRFDevices.pdf
Description
PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE POWER VDMOS TRANSISTOR Polyfet RF Devices
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