BLP40 Datasheet, Power, Power-One

BLP40 Features

• Power
• RoHS lead-free solder and lead-solder-exempted products are available
• Industry-standard 3” x 5” footprint
• Main output remote sense
• CE marked to L

PDF File Details

Part number:

BLP40

Manufacturer:

Power-One

File Size:

144.29kb

Download:

📄 Datasheet

Description:

Changing the shape of power. The BLP40 Series’ economical and compact construction provides single or three-output ac-dc power conversion to meet the requirements

BLP40 Application

• Applications - Power-One products are not designed, intended for use in, or authorized for use as critical components in life support systems, equip

TAGS

BLP40

Power-One

📁 Related Datasheet

BLP4040 - PN junction Si photocell (SHANGHAI BELLING)
.. BLP4040 PN Si Si ，。 • • ： PN ： AlSi Anode P ：4.0 mm × 4.0 mm ：300±25µm Cathode N N P N N ： PN ：AlSi http://w.

BLP021N10 - MOSFET (BELLING)
BLP021N10 MOSFET 1．Description Step-Down Converter BLP021N10, the N-channel Enhanced Power , MOSFETs, is obtained by advanced double trench tech.

BLP023N10 - MOSFET (BELLING)
BLP023N10 MOSFET 1．Description Step-Down Converter BLP023N10, the N-channel Enhanced Power , MOSFETs, is obtained by advanced double trench tech.

BLP0240 - Si PIN junction photodiode (SHANGHAI BELLING)
.. BLP0240 PIN Si Si ， 。 • • ： PIN ： AlSi Anode Cathode N P ：1.0 mm × 1.0 mm ：300±25µm N P N N ： PIN ：AlSi http.

BLP02N08 - MOSFET (BELLING)
BLP02N08 MOSFET 1．Description Step-Down Converter BLP02N08, the N-channel Enhanced Power , MOSFETs, is obtained by advanced double trench techno.

BLP038N10GL - MOSFET (BELLING)
BLP038N10GL MOSFET Step-Down Converter 1．Description , BLP038N10GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench te.

BLP038N15 - MOSFET (BELLING)
BLP038N15 MOSFET 1．Description Step-Down Converter BLP038N15, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technolog.

BLP03N10 - MOSFET (BELLING)
BLP03N10 MOSFET Step-Down Converter 1．Description , BLP03N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technolo.

BLP0427M9S20 - Power LDMOS transistor (Ampleon)
BLP0427M9S20; BLP0427M9S20G Power LDMOS transistor Rev. 1 — 16 January 2018 Product data sheet 1. Product profile 1.1 General description 20 W plas.

BLP0427M9S20G - Power LDMOS transistor (Ampleon)
BLP0427M9S20; BLP0427M9S20G Power LDMOS transistor Rev. 1 — 16 January 2018 Product data sheet 1. Product profile 1.1 General description 20 W plas.