QPA1017D Datasheet - Qorvo

QPA1017D 50 Watt GaN Power Amplifier

5.7 * 7 GHz 50 Watt GaN Amplifier (10 pcs.) Evaluation Board for QPA1017D 1 of 29 www.qorvo.com ® Absolute Maximum Ratings Parameter Drain Voltage (VD) Gate Voltage Range (VG) Drain Current (ID) Gate Current (IG) Power Dissipation (PDISS), 85 °C Value / Range 29.5 V -6 V to 0 V 10 A Se.

QPA1017D ® 5.7 7 GHz 50 Watt GaN Power Amplifier Product Overview Qorvo's QPA1017D is a high power MMIC amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). The QPA1017D operates from 5.7 7.0 GHz, provides 50 W of saturated output power with 21 dB of large signal gain and greater than 40% power added efficiency. For satellite communications applications, QPA1017D provides 25 W linear power with 25 dBc third order intermodulation distorti.

QPA1017D Features

* Frequency Range: 5.7

* 7 GHz

* PSAT (PIN = 26 dBm): > 47 dBm

* PAE (PIN = 26 dBm): > 40 %

* Power Gain (PIN = 26 dBm): > 21 dB

* IM3 (POUT/Tone = 41 dBm): -25 dBc

* Small Signal Gain: > 28 dB

* Bias: VD = +24 V, IDQ = 1.5 A, VG = -2.5 V typ.

* Die Dimension

QPA1017D Datasheet (1.01 MB)

QPA1017D Datasheet Preview — Preview of QPA1017D PDF

Datasheet Details

Part number:

QPA1017D

Manufacturer:

Qorvo

File Size:

1.01 MB

Description:

50 watt gan power amplifier.

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QPA1017D Watt GaN Power Amplifier Qorvo

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