QPA1017D - 50 Watt GaN Power Amplifier
5.7 * 7 GHz 50 Watt GaN Amplifier (10 pcs.) Evaluation Board for QPA1017D 1 of 29 www.qorvo.com ® Absolute Maximum Ratings Parameter Drain Voltage (VD) Gate Voltage Range (VG) Drain Current (ID) Gate Current (IG) Power Dissipation (PDISS), 85 °C Value / Range 29.5 V -6 V to 0 V 10 A Se
QPA1017D ® 5.7 7 GHz 50 Watt GaN Power Amplifier Product Overview Qorvo's QPA1017D is a high power MMIC amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15).
The QPA1017D operates from 5.7 7.0 GHz, provides 50 W of saturated output power with 21 dB of large signal gain and greater than 40% power added efficiency.
For satellite communications applications, QPA1017D provides 25 W linear power with 25 dBc third order intermodulation distorti
QPA1017D Features
* Frequency Range: 5.7
* 7 GHz
* PSAT (PIN = 26 dBm): > 47 dBm
* PAE (PIN = 26 dBm): > 40 %
* Power Gain (PIN = 26 dBm): > 21 dB
* IM3 (POUT/Tone = 41 dBm): -25 dBc
* Small Signal Gain: > 28 dB
* Bias: VD = +24 V, IDQ = 1.5 A, VG = -2.5 V typ.
* Die Dimension
