H7P0601DL Silicon P Channel MOS FET High Speed Power Switching

Renesas Technology

Description

H7P0601DL, H7P0601DS Silicon P Channel MOS FET High Speed Power Switching REJ03G0044-0100Z Rev.1.00 Aug.05.2003 www.DataSheet4U.com .

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Datasheet Specifications

Part number: H7P0601DL
Manufacturer: Renesas ↗ Technology
File Size: 132.56 KB
Datasheet: H7P0601DL_RenesasTechnology.pdf
Description: Silicon P Channel MOS FET High Speed Power Switching

Features

* Low on-resistance RDS(on) = 40 mΩ typ.
* Low drive current
* 4.5 V gate drive device can driven from 5 V source Outline DPAK-2 D 4 DPAK-S 4 G 1 2 S 1 2 3 3 H7P0601DS H7P0601DL 1. Gate 2. Drain 3. Source 4. Drain Rev.1.00, Aug.05.2003, page 1 of 10 H7P0601DL, H7P0601D

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