H7P0601DS

Silicon P Channel MOS FET High Speed Power Switching

Renesas Technology

Image	Manufacturer	B2B MPN	Description	Distributor	Stock	Quantity	Price	Buy Now
	Renesas Electronics Corporation	H7P0601DS90TL-E	PCH POWER MOSFET -60V -20A 50MOHM DPAK - Tape and Reel (Alt: H7P0601DS90TL-E)	Avnet Americas	0	1 units	$3.02	🛒 Buy Now

H7P0601DS Datasheet (132.56 KB)

H7P0601DS Datasheet Preview — Preview of H7P0601DS PDF

Datasheet Details

Part number:

H7P0601DS

Manufacturer:

Renesas ↗ Technology

File Size:

132.56 KB

Description:

Silicon p channel mos fet high speed power switching.

H7P0601DS Features

* Low on-resistance RDS(on) = 40 mΩ typ.

* Low drive current

* 4.5 V gate drive device can driven from 5 V source Outline DPAK-2 D 4 DPAK-S 4 G 1 2 S 1 2 3 3 H7P0601DS H7P0601DL 1. Gate 2. Drain 3. Source 4. Drain Rev.1.00, Aug.05.2003, page 1 of 10 H7P0601DL, H7P0601D

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H7P0601DS Silicon Channel MOS FET High Speed Power Switching Renesas Technology

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H7P0601DS Distributor

Renesas Electronics Corporation

H7P0601DSTL-E

Power MOSFET, P Channel, 60 V, 20 A, 50 Milliohms, TO-252 (DPAK), 4 Pins, Surface Mount (Alt: H7P0601DSTL-E)

Avnet Asia

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