H7P1002DS Datasheet, Switching, Renesas Technology

H7P1002DS Features

  • Switching
  • Low on-resistance RDS(on) = 85 mΩ typ. www.DataSheet4U.com
  • Low drive current
  • 4.5 V gate drive device can driven from 5 V source Outline RENESAS Package co

PDF File Details

Part number:

H7P1002DS

Manufacturer:

Renesas ↗ Technology

File Size:

153.89kb

Download:

📄 Datasheet

Description:

Silicon p channel mos fet high speed power switching.

Datasheet Preview: H7P1002DS 📥 Download PDF (153.89kb)
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H7P1002DS Application

  • Applications such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or tec

TAGS

H7P1002DS
Silicon
Channel
MOS
FET
High
Speed
Power
Switching
Renesas Technology

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Stock and price

Renesas Electronics Corporation
PCH POWER MOSFET -100V -15A 105M
DigiKey
H7P1002DS90TR-E
0 In Stock
Qty : 9000 units
Unit Price : $1.09
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