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H7P1002DS, H7P1002DL Silicon P Channel MOS FET High Speed Power Switching

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Description

H7P1002DL, H7P1002DS Silicon P Channel MOS FET High Speed Power Switching REJ03G1601-0100 Rev.1.00 Nov 16, 2007 .

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This datasheet PDF includes multiple part numbers: H7P1002DS, H7P1002DL. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
H7P1002DS, H7P1002DL
Manufacturer
Renesas ↗ Technology
File Size
153.89 KB
Datasheet
H7P1002DL_RenesasTechnology.pdf
Description
Silicon P Channel MOS FET High Speed Power Switching
Note
This datasheet PDF includes multiple part numbers: H7P1002DS, H7P1002DL.
Please refer to the document for exact specifications by model.

Features

* Low on-resistance RDS(on) = 85 mΩ typ. www. DataSheet4U. com
* Low drive current
* 4.5 V gate drive device can driven from 5 V source Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) ) 4 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 4 D

Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informat

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