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H7P1002DS, H7P1002DL - Silicon P Channel MOS FET High Speed Power Switching

H7P1002DS Description

H7P1002DL, H7P1002DS Silicon P Channel MOS FET High Speed Power Switching REJ03G1601-0100 Rev.1.00 Nov 16, 2007 .

H7P1002DS Features

* Low on-resistance RDS(on) = 85 mΩ typ. www. DataSheet4U. com
* Low drive current
* 4.5 V gate drive device can driven from 5 V source Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) ) 4 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 4 D

H7P1002DS Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informat

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This datasheet PDF includes multiple part numbers: H7P1002DS, H7P1002DL. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
H7P1002DS, H7P1002DL
Manufacturer
Renesas ↗ Technology
File Size
153.89 KB
Datasheet
H7P1002DL_RenesasTechnology.pdf
Description
Silicon P Channel MOS FET High Speed Power Switching
Note
This datasheet PDF includes multiple part numbers: H7P1002DS, H7P1002DL.
Please refer to the document for exact specifications by model.

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Silicon Channel MOS FET High Speed Power Switching Renesas Technology
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