Description
H7P1002DL, H7P1002DS Silicon P Channel MOS FET High Speed Power Switching REJ03G1601-0100 Rev.1.00 Nov 16, 2007 .
Features
* Low on-resistance RDS(on) = 85 mΩ typ. www. DataSheet4U. com
* Low drive current
* 4.5 V gate drive device can driven from 5 V source
Outline
RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) )
4
RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) )
4 D
Applications
* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informat