H7P1002DS

Silicon P Channel MOS FET High Speed Power Switching

Renesas Technology

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	Renesas Electronics Corporation	H7P1002DS90TR-E	PCH POWER MOSFET -100V -15A 105M	DigiKey	0	3000 units	$3.28	🛒 Buy Now

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Datasheet Details

Part number:

H7P1002DS

Manufacturer:

Renesas ↗ Technology

File Size:

153.89 KB

Description:

Silicon p channel mos fet high speed power switching.
H7P1002DL, H7P1002DS Silicon P Channel MOS FET High Speed Power Switching REJ03G1601-0100 Rev.1.00 N.
ov 16, 2007 Features * Low on-resistance RDS(on) = 85 mΩ typ. www.DataSheet4U.com * Low drive curre.

✔ H7P1002DS Features

Low on-resistance RDS(on) = 85 mΩ typ. www.DataSheet4U.com
Low drive current
4.5 V gate drive device can driven from 5 V source Outline RENESAS Package code: PRSS0

✔ H7P1002DS Application

such as the development of weapons of mass destruction or for the purpose of any other military use. When ex

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H7P1002DS Silicon Channel MOS FET High Speed Power Switching Renesas Technology

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