H7P1002DL Datasheet, Switching, Renesas Technology

H7P1002DL Features

  • Switching
  • Low on-resistance RDS(on) = 85 mΩ typ. www.DataSheet4U.com
  • Low drive current
  • 4.5 V gate drive device can driven from 5 V source Outline RENESAS Package co

PDF File Details

Part number:

H7P1002DL

Manufacturer:

Renesas ↗ Technology

File Size:

153.89kb

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📄 Datasheet

Description:

Silicon p channel mos fet high speed power switching.

Datasheet Preview: H7P1002DL 📥 Download PDF (153.89kb)
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H7P1002DL Application

  • Applications such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or tec

TAGS

H7P1002DL
Silicon
Channel
MOS
FET
High
Speed
Power
Switching
Renesas Technology

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