H7P1002DL Silicon P Channel MOS FET High Speed Power Switching

Renesas Technology

Description

H7P1002DL, H7P1002DS Silicon P Channel MOS FET High Speed Power Switching REJ03G1601-0100 Rev.1.00 Nov 16, 2007 .

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Datasheet Specifications

Part number: H7P1002DL
Manufacturer: Renesas ↗ Technology
File Size: 153.89 KB
Datasheet: H7P1002DL_RenesasTechnology.pdf
Description: Silicon P Channel MOS FET High Speed Power Switching

Features

* Low on-resistance RDS(on) = 85 mΩ typ. www. DataSheet4U. com
* Low drive current
* 4.5 V gate drive device can driven from 5 V source Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) ) 4 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 4 D

Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informat

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