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HAT1110R - Silicon P-Channel Power MOSFET

HAT1110R Description

HAT1110R Silicon P Channel Power MOS FET Power Switching .

HAT1110R Features

* Capable of
* 4.5 V gate drive
* Low drive current
* High density mounting Outline SOP-8 78 56 DD DD 2 4 G G S1 MOS1 S3 MOS2 8 7 65 1 234 REJ03G0416-0200 Rev.2.00 Oct.07.2004 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Sym

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Silicon P-Channel Power MOSFET Renesas Technology
Renesas Technology HAT1110R-like datasheet