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HAT1127H Datasheet - Renesas Technology

HAT1127H Silicon P-Channel Power MOSFET

HAT1127H Features

* Capable of

* 4.5 V gate drive

* Low drive current

* High density mounting

* Ultra Low on-resistance RDS(on) = 3.6 mΩ typ. (at VGS =

* 10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 4 G 1 234 5 D SSS 123 REJ03G1330-0500 Rev.5

HAT1127H_RenesasTechnology.pdf

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Datasheet Details

Part number:

HAT1127H

Manufacturer:

Renesas ↗ Technology

File Size:

75.04 KB

Description:

Silicon p-channel power mosfet.

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HAT1127H HAT1127H Silicon P-Channel Power MOSFET Renesas Technology

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