Part number: HAT1126RJ
Manufacturer: Renesas (https://www.renesas.com/) Technology
File Size: 151.14KB
Download: 📄 Datasheet
Description: Silicon P-Channel Power MOSFET
* Low on-resistance
* Capable of 4.5 V gate drive www.DataSheet4U.com
* High density mounting
* “J” is for Automotive application High temperature D-S lea.
esas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that cust.
TAGS
📁 Related Datasheet
HAT1126R - Silicon P-Channel Power MOSFET
(Renesas Technology)
HAT1126R, HAT1126RJ
Silicon P Channel Power MOS FET High Speed Power Switching
REJ03G0406-0100 Rev.1.00 Sep.10.2004
Features
• Low on-resistance • Ca.
HAT1127H - Silicon P-Channel Power MOSFET
(Renesas Technology)
HAT1127H
Silicon P Channel Power MOS FET Power Switching
Features
• Capable of –4.5 V gate drive • Low drive current • High density mounting • Ultra L.
HAT1108C - Silicon P-Channel Power MOSFET
(Renesas Technology)
HAT1108C
Silicon P Channel MOS FET Power Switching
REJ03G1234-0500 Rev.5.00 Aug 30, 2006
Features
• Low on-resistance RDS(on) = 155 mΩ typ. (at VGS =.
HAT1110R - Silicon P-Channel Power MOSFET
(Renesas Technology)
HAT1110R
Silicon P Channel Power MOS FET Power Switching
Features
• Capable of –4.5 V gate drive • Low drive current • High density mounting
Outline
.
HAT1111C - Silicon P-Channel Power MOSFET
(Renesas Technology)
HAT1111C
Silicon P Channel MOS FET Power Switching
REJ03G0446-0600 Rev.6.00 May 19.2005
Features
• Low on-resistance RDS(on) = 245 mΩ typ. (at VGS = .
HAT1139H - Silicon P-Channel Power MOSFET
(Renesas Technology)
HAT1139H
Silicon P Channel Power MOS FET Power Switching
Features
• Capable of –4.5 V gate drive • Low drive current • High density mounting • Low on.
HAT1000-S - Current Transducer
(LEM)
Current Transducer HAT 500..1500 - S
For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primary .
HAT1000-S - (HAT200-S - HAT1500-S) Current Transducer
(LEM)
Current Transducer HAT 200..1500-S
For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primary ci.
HAT1016R - Silicon P-Channel Power MOSFET
(Hitachi Semiconductor)
HAT1016R
Silicon P Channel Power MOS FET High Speed Power Switching
ADE-208-471 D (Z) 5th. Edition February 1999 Features
• • • • Low on-resistance C.
HAT1016R - Silicon P-Channel Power MOSFET
(Renesas)
HAT1016R
Silicon P Channel Power MOS FET High Speed Power Switching
Features
• Low on-resistance • Capable of 4 V gate drive • Low drive current • Hi.