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RJK0380DPA Silicon N Channel Power MOS FET

RJK0380DPA Description

Preliminary www.DataSheet4U.com Datasheet RJK0380DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1827-0220 Power Switching Rev..
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

RJK0380DPA Features

* High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.4 m typ. (at VGS = 10 V)
* Pb-free
* Halogen-free
* Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8 D D D D 5 6 7 8

RJK0380DPA Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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Silicon Channel Power MOS FET Renesas Technology
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