Datasheet Specifications
- Part number
- RJK0383DPA
- Manufacturer
- Renesas ↗ Technology
- File Size
- 146.67 KB
- Datasheet
- RJK0383DPA_RenesasTechnology.pdf
- Description
- Silicon N Channel Power MOS FET Power Switching
Description
www.DataSheet4U.com RJK0383DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G1723-0101 Preliminary Rev.
Features
* Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline WPAK 2 3 4 D1 D1 D1 9 S1/D2 5 6 7 8 1 G1 8 G2 9 S2 S2 S2 6 7 5 4 3 2 1 (Bottom View) MOS1 MOS2 + SBD Absolute Maximum Ratings (Ta = 25°C) RatinApplications
* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informatRJK0383DPA Distributors
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