* Low on-resistance Capable of 4.5 V gate drive High density mounting Pb-free Halogen-free Outline WPAK 2 3 4 D1 D1 D1 9 S1/D2 5 6 7 8 1 G1 8 G2 9 S2 S2 S2 6 7 5 4 3 2 1 (Bottom View) MOS1 MOS2 + SBD Absolute Maximum Ratings (Ta = 25°C) Ratin
RJK0383DPA Datasheet (146.67 KB)
RJK0383DPA
Renesas ↗ Technology
146.67 KB
Silicon n channel power mos fet power switching.
www.DataSheet4U.com RJK0383DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G1723-0101 Preliminary Rev.
📁 Related Datasheet
RJK0380DPA Silicon N Channel Power MOS FET (Renesas Technology)
RJK0381DPA Silicon N Channel Power MOS FET (Renesas Technology)
RJK0384DPA Silicon N Channel Power MOS FET Power Switching (Renesas Technology)
RJK0389DPA Silicon N Channel Power MOS FET Power Switching (Renesas Technology)
RJK0301DPB Silicon N Channel Power MOS FET Power Switching (Renesas Technology)
RJK0302DPB Silicon N Channel Power MOS FET Power Switching (Renesas Technology)
RJK0303DPB Silicon N Channel Power MOS FET Power Switching (Renesas Technology)
RJK0304DPB Silicon N Channel Power MOS FET Power Switching (Renesas Technology)
RJK0305DPB Silicon N Channel Power MOS FET Power Switching (Renesas Technology)
RJK0305DPB-02 Silicon N-Channel Power MOSFET (Renesas)
