* High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.4 m typ. (at VGS = 10 V)
* Pb-free
* Halogen-free
* Outline RENESAS Package code: PWSN0008DC-A (Package name: WPAK(2)) 5 6 7 8 D D D D 5 6 7 8
RJK0381DPA Datasheet (109.17 KB)
RJK0381DPA
Renesas ↗ Technology
109.17 KB
Silicon n channel power mos fet.
Preliminary www.DataSheet4U.com Datasheet RJK0381DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode REJ03G1829-0210 Power Switching Rev..
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