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RJK03E2DNS

Silicon N Channel Power MOS FET

RJK03E2DNS Features

* High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.9 m typ. (at VGS = 10 V)

* Pb-free

* Halogen-free

* REJ03G1904-0200 Rev.2.00 Apr 06, 2010 Outline RENESAS Package code: PWSN0008JB-A (Package n

RJK03E2DNS General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJK03E2DNS Datasheet (166.68 KB)

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Datasheet Details

Part number:

RJK03E2DNS

Manufacturer:

Renesas ↗ Technology

File Size:

166.68 KB

Description:

Silicon n channel power mos fet.

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RJK03E2DNS Silicon Channel Power MOS FET Renesas Technology

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